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| NTE322 Silicon NPN Transistor RF Power Output Description: The NTE322 is a silicon NPN RF power transistor in a TO202N type package designed for use in Citizen-Band and other high-frequency communications equipment operating to 30MHz. Higher breakdown voltages allow a high percentage of up-modulation in AM circuits. Features: D Output Power: 3.5W (Min) @ VCC = 13.6V D Power Gain: 11.5dB (Min) D High Collector Emitter Breakdown Voltage: V(BR)CES 65V D DC Current Gain: Linear to 500mA Absolute Maximum Ratings: Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/C Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5C/W Thermal Resistance, Junction to Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W Note 1. RthJA is measured with the device soldered into a typical printed circuit board. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Functional Test Common-Emitter Amplifier Power Gain Output Power Collector Efficiency Percentage Up-Modulation GPE PO PO = 3.5W, VCC = 13.6V, f = 27MHz PIN = 250mW, VCC = 13.6V, f = 27MHz PO = 3.5W, VCC = 13.6V, f = 27MHz, Note 4 f = 27MHz, Note 5 11.5 3.5 - - - - 70 85 - - - - dB W % % Cob VCB = 12V, IE = 0, f = 1MHz - - 40 pF hFE IC = 100mA, VCE = 10V, Note 3 10 - - V(BR)CES IC = 150mA, VBE = 0, Note 2 V(BR)EBO IE = 1mA, IC = 0 ICBO VCB = 50V, IE = 0 65 3 - - - - - - 0.01 V V mA Symbol Test Conditions Min Typ Max Unit Note 2. Pulsed thru a 25mH inductor Note 3. Pulse test: Pulse Width 300s, Duty Cycle 2.0% RF PO 100 Note 4. = (VCC) (IC) Note 5. Percentage Up-Modulation is measured by setting the Carrier Power (PC) to 3.5 Watts with VCC = 13.6V and noting the power input. Then the peak envelope power (PEP) is noted after doubling the original power input to simulate driver modulation (at a 25% duty cycle for thermal considerations) and raising the VCC to 25V (to simulate the modulating voltage). Percentage Up-Modulation is then determined by the relation: PEP 1/2 -1 100 Percentage Up-Modulation = PC 27MHz Test Circuit VCC 13.6V C5 RFC2 L2 INPUT C1 L1 C4 OUTPUT C6 C3 C2 RFC1 C1, C2 C3, C4 C5 C6 RFC1 RFC2 L1 L2 9.0 - 180pF ARCO 463 or Equivalent 5.0 - 80pF ARCO 462 or Equivalent 0.02F Ceramic Disc 0.1F Ceramic Disc 4 Turns #30 Enameled Wire Wound on Ferroxcube Bead Type 56-590-65/3B 26 Turns #22 Enameled Wire (2 Layers - 13 Turns Each Layer) 1/4" Inner Diameter 0.22H Molded Choke 0.68H Molded Choke .380 (9.65) Max .050 (1.27) .160 (4.06) .280 (7.25) Max .128 (3.28) Dia .100 (2.54) .218 (5.55) EBC .995 (25.3) .475 (12.0) Min .100 (2.54) .200 (5.08) Collector Connected to Tab |
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